Multiple scattering effects of MeV electrons in very thick amorphous specimens

Ultramicroscopy

Volumn 110, Issue 3, 2010, Pages 259-268

  Wang, Fang ^a   Zhang, Hai Bo ^a   Cao, Meng ^a   Nishi, Ryuji ^b   Takaoka, Akio ^b  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

High energy electrons; Multiple scattering; Thick specimens; Transmission electron microscopy

Indexed keywords

ACCELERATING VOLTAGES; BOTTOM SURFACES; BRIGHTFIELD; ELECTRON ENERGIES; ELECTRON TRANSMISSION; GOLD PARTICLES; HIGH-ENERGY ELECTRON; HIGH-ENERGY ELECTRONS; IMAGE BLURRING; MEV-ELECTRONS; MULTIPLE SCATTERING EFFECT; OSAKA UNIVERSITY; POWER LAW; SCATTERING THEORY; SPECIMEN THICKNESS; TOP-BOTTOM EFFECTS; ULTRA HIGH VOLTAGE;

AMORPHOUS FILMS; ELECTRON MICROSCOPES; HIGH ENERGY PHYSICS; IMAGE QUALITY; MULTIPLE SCATTERING; RESINS; SIGNAL TO NOISE RATIO; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONS;

EPOXY RESIN; SILICON DIOXIDE;

ARTICLE; CONTROLLED STUDY; ELECTRIC POTENTIAL; ELECTRON; IMAGE PROCESSING; IMAGE QUALITY; LIGHT SCATTERING; SIGNAL NOISE RATIO; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 75849148441     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2009.12.013     Document Type: Article

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