Monte Carlo simulation of electron transmission through the scattering masks with angular limitation for projection electron lithography

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3641-3646

  Sun, X ^a   Ding, Z J ^a   Pu, Q R ^a   Li, H M ^a   Wu, Z Q ^a   Gu, W Q ^b   Peng, K W ^b   Wu, G J ^b   Zhang, F A ^b   Kang, N K ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (China)

^c INSTITUTE OF ELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION MODEL; ELECTRON ENERGY LOSS; ELECTRON PROJECTION LITHOGRAPHY; ELECTRON TRANSMISSION; ENERGY LOSS DISTRIBUTIONS; MASK THICKNESS; MONTE CARLO SIMULATION; MONTE CARLO SIMULATIONS; SCATTERING LAYER; THROUGH-MASK;

ANGULAR DISTRIBUTION; ELECTRON BEAM LITHOGRAPHY; ENERGY DISSIPATION;

MONTE CARLO METHODS;

EID: 18644369236     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505679     Document Type: Article

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