The band gap and band offset in ultrathin oxide-semiconductor heterostructures

Superlattices and Microstructures

Volumn 47, Issue 3, 2010, Pages 369-376

  Schmeisser D ^a   Henkel, K ^a   Bergholz, M ^a   Tallarida, M ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Band gap; Ultrathin oxide semiconductor heterostructures

Indexed keywords

BAND GAPS; BAND LINE UP; BAND OFFSETS; BULK SAMPLES; DENSITIES OF STATE; HIGH-K OXIDES; IN-SITU; LONG TERM STABILITY; LOSS FUNCTIONS; NATIVE OXIDES; RESONANT INELASTIC X-RAY SCATTERING; SEMICONDUCTOR HETEROSTRUCTURES; SI(0 0 1); ULTRA-THIN; ULTRA-THIN OXIDE; ULTRATHIN DIELECTRICS; ULTRATHIN LAYERS; VALENCE BAND PHOTOELECTRON SPECTROSCOPY;

CRYSTALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; ENERGY DISSIPATION; ENERGY GAP; HETEROJUNCTIONS; SILICON CARBIDE; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SCATTERING;

ABSORPTION SPECTROSCOPY;

EID: 75849133442     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.12.003     Document Type: Article

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