Quantitative analysis of valence electron energy-loss spectra of aluminium nitride

Journal of Microscopy

Volumn 191, Issue 3, 1998, Pages 286-296

  Dorneich, A D ^a,b   French, R H ^c   Mullejans H ^a,d   Loughin, S ^b   Ruhle M ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b Gebhard Balluf GmbH and Co   (Germany)

^c DUPONT COMPANY   (United States)

^d JOINT RESEARCH CENTRE   (Italy)

Author keywords

Aluminium nitride; STEM; VEELS

Indexed keywords

ALUMINUM NITRIDE; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NITRIDES; OPTICAL PROPERTIES; SPECTRUM ANALYSIS; ULTRAVIOLET SPECTROSCOPY;

ELECTRON ENERGY-LOSS SPECTRA; ELECTRONIC.STRUCTURE; ENERGY LOSS FUNCTION; INTER-BAND TRANSITION; OPTICAL ELECTRONICS; STEM; TRANSITION STRENGTHS; VALENCE ELECTRON; VALENCE ELECTRON ENERGY-LOSS SPECTROSCOPIES; VEELS;

ELECTRONIC STRUCTURE;

ALUMINUM NITRATE;

ARTICLE; ELECTRON ENERGY LOSS SPECTROSCOPY; PRIORITY JOURNAL; QUANTITATIVE ASSAY; RADIATION SCATTERING; SCANNING ELECTRON MICROSCOPY; STRUCTURE ANALYSIS;

EID: 0031693624     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.1998.00370.x     Document Type: Article

References (33)

1. Ching, W.Y. (1990) Theoretical studies of the electronic properties of ceramic materials. J. Am. Ceram. Soc. 73, 3135-3160.
2. Ching, W.Y. & Harmon, H.N. (1986) Electronic structure of AIN. Phys Rev. B, 34, 5305-5308.
3. Daniels, J., Festenberg, C., Raether, H. & Zeppenfeld, K. (1970) Optical constants of solids by electron spectroscopy. Springer Tracts Mod. Phys. 54, 77-135.
4. Egerton, R.F. (1996) Electron Energy-loss Spectroscopy in the Electron Microscope, 2nd edn. Plenum, New York.
5. Egerton, R.R., Yang, Y.Y. & Cheng, S.C. (1995) Characterization and use of the Gatan 666 parallel-recording electron energy-loss spectrometer, Ultramicroscopy, 48, 239-250.
6. Festenberg, C. (1969) Energieverlustmessungen an III-V-Verbindungen. J. Physik. 227, 455-481.
7. Fink, J. (1989) Recent developments in energy-loss spectroscopy. Adv. Electron. Electron Phys. 75, 121-232.
8. 3, with comparison to AION and AIN. J. Am. Ceram. Soc. 73, 477-489.
9. French, R.H., Cannon, R.M., DeNoyer, L.K. & Chiang, Y.-M. (1995) Full spectral calculation of non-retarded Hamaker constants for ceramic systems from interband transition strengths. Solid State Ionics. 75, 13-33.
10. French, R.H., Jones, D.J. & Loughin, S. (1994) Interband electronic structure of α-alumina up to 2167 K. J. Am. Ceram. Soc. 77, 412-422.
11. French, R.H., Müllejans, U., Jones, D.J., Duscher, G., Cannon, R.M. & Rühle, M. (1998) Dispersion forces and Hamaker constants for intergranular films in silicon nitride from spatially resolved-valence energy loss spectrum imaging. Acta Mater. 46, 2271-2287.
12. Gautier, M., Duraud, J.P. & Le Gressus, C. (1987) Electronic structure of an AIN film produced by ion implantation, studied by electron spectroscopy. J. Appl. Phys. 61, 574-580.
13. Johnson, D.W. (1975) A Fourier series method for numerical Kramers-Kronig analysis. J. Phys. A: Math. Gen. 8, 490-495.
14. Johnson, N.L. & Kotz, S. (1970) Distributions in Statistics: Continuous Univariate Distributions, Vol. 1, p. 13, Houghton Mifflin Company, Boston.
15. Kramers, H.A. (1927) La diffusion de la lamière par les atomes. Atti. Congr. Int. Fis. Como. 2, 545-557.
16. de Kronig, R.L. (1926) On the theory of dispersion of X-rays. J. Opt. Soc. Am. 12, 547-557.
17. Lieske, N. & Hezel, R. (1981) Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminum. J. Appl. Phys. 52, 5806-5810.
18. Loughin, S. (1992) Vacuum ultraviolet spectroscopy and analytical critical point modeling of the electronic structure of aluminum nitride. Dissertation, University of Pennsylvania.
19. Loughin, S., French, R.H., Ching, W.Y., Xu, Y.N. & Slack, G.A. (1995) Electronic structure of aluminum nitride: theory and experiment. Appl. Phys. Lett. 63, 1182-1184.
20. Loughin, S., French, R.H., DeNoyer, L.K., Ching, W.Y. & Xu, Y.N. (1996) Critical point analysis of the interband transition strength of electrons. J. Phys. D: Appl. Phys. 29, 1740-1750.
21. 3 using spatially resolved valence electron energy-loss spectra. IOP Conf. Ser. 138, 59-62.
22. 3 using spatially resolved valence electron energy-loss spectra. Mater Res. Soc. Proc. Symp. 332, 169-176.
23. Müllejans, H. & French, R.H. (1996) Interband electronic structure of a near Σ11 grain boundary in α-alumina determined by spatially resolved valence electron energy-loss spectroscopy. J. Phys D: Appl. Phys. 29, 1751-1760.
24. Olson, C.G., Sexton, J.H., Lynch, D.W., Bevolo, A.J., Shanks, H.R., Harimon, B.N., Ching, W.Y. & Wieliczka, D.M. (1985) Photoelectron and electron energy-loss spectra of epitaxial aluminum nitride. Solid State Commun. 56, 55-57.
25. Pfleiderer, A. (1996) Ortsaufgelöste Elektronenenergieverlustspektroskopie von inneren Grenzflächen in Keramiken. Diplomarbeit, Universität Stuttgart.
26. Raether, H. (1965) Solid state excitations by electrons. Springer Tracts Mod. Phys. 38, 84-157.
27. Schattschneider, P. (1986) Fundamentals of Inelastic Electron Scattering, Springer, Wien.
28. Slack. G.A. (1973) Nonmetallic crystals with high thermal conductivity. J. Phys. Chem. Solids, 34, 321-335.
29. Smith, D.Y. (1985) Dispersion theory, sum rules, and their application to the analysis of optical data. Handbook of Optical Constants of Solids (ed. by E. D. Palik). pp. 35-68. Academic Press, New York.
30. Sutton, A.P. (1993) Electronic Structure of Materials. Clarendon Press, Oxford.
31. Walsh, C.A. (1989) Modelling and interpretation of electron energy-loss spectra from interfaces. Dissertation, University of Cambridge.
32. Werdecker, W. & Aldinger, F. (1984) Aluminum nitride - an alternative ceramic substrate for high power applications in microcircuits. IEEE Trans. Components, Hybrids, Manuf. Technol. 7, 399-404.
33. Wooten, F. (1972) Optical Properties of Solids. Academic Press, New York.