Optimization of the AlON buffer layer for PrX OY /Si stacks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 253-257

  Henkel, K ^a   Burkov, Y ^a   Karavaev, K ^a   Torche, M ^a   Schwiertz, C ^a   Schmeisser D ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITRIDES; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

ALUMINUM OXYNITRIDE; ELECTRICAL PARAMETERS; INTERFACIAL LAYERS; METAL - INSULATOR - SEMICONDUCTORS; SPECTROSCOPIC CHARACTERIZATIONS;

BUFFER LAYERS;

EID: 59949088953     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3025905     Document Type: Article

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