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Volumn 47, Issue 10, 2003, Pages 1607-1611
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The Pr2O3/Si(0 0 1) interface studied by synchrotron radiation photo-electron spectroscopy
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Author keywords
High k dielectric material; Interface; Pr2O3; Silicate
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
DEPTH INDICATORS;
DIELECTRIC MATERIALS;
GATES (TRANSISTOR);
INTERFACES (MATERIALS);
MOLECULAR BEAM EPITAXY;
PHOTOELECTRON SPECTROSCOPY;
ULTRAHIGH VACUUM;
GATE DIELECTRICS;
PRASEODYMIUM COMPOUNDS;
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EID: 0042093591
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(03)00178-3 Document Type: Conference Paper |
Times cited : (12)
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References (14)
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