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Volumn 47, Issue 10, 2003, Pages 1607-1611

The Pr2O3/Si(0 0 1) interface studied by synchrotron radiation photo-electron spectroscopy

Author keywords

High k dielectric material; Interface; Pr2O3; Silicate

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPTH INDICATORS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; ULTRAHIGH VACUUM;

EID: 0042093591     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00178-3     Document Type: Conference Paper
Times cited : (12)

References (14)
  • 8
    • 4243441815 scopus 로고    scopus 로고
    • Proceedings of the 3rd international meeting "challenges in predictive process simulation - ChiPPS 2002"
    • Schmeißer D. Proceedings of the 3rd International Meeting "Challenges in Predictive Process Simulation - ChiPPS 2002", in Materials Science in Semiconductor Processing (2003).
    • (2003) Materials Science in Semiconductor Processing
    • Schmeißer, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.