Stability and electronic properties of silicates in the system SiO 2-Pr2O3-Si(001)

Journal of Physics Condensed Matter

Volumn 16, Issue 2, 2004, Pages

  Schmeißer, Dieter ^a   Muessig, Hans Joachim ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CHARGE TRANSFER; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL ION VACANCIES; VALENCE BANDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0442295425     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/018     Document Type: Conference Paper

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