Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2 /Si and SiO2 /SiC interfaces

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 393-398

  Tallarida, Massimo ^a   Sohal, Rakesh ^a   Schmeisser, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Resonant photoemission; Si oxide; Spectroscopies; XAS

Indexed keywords

BINDING ENERGY; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); PHOTOEMISSION; SILICA; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

PHOTON ENERGY; RESONANT PHOTOEMISSION; X RAY ABSORPTION SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 33845196962     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.018     Document Type: Article

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