Strained silicon devices

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 61-68

  Reiche, M ^a   Moutanabbir, O ^a   Hoentschel, J ^b   Gosele U ^a   Flachowsky, S ^b   Horstmann, M ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b GLOBALFOUNDRIES   (Germany)

Author keywords

Global strain; Mobility enhancement; Process induced strain; SSOI; Strained silicon

Indexed keywords

DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE;

CARRIER VELOCITY; CURRENT DRIVES; GATE OXIDE THICKNESS; MOBILITY ENHANCEMENT; PHYSICAL MECHANISM; PROCESS-INDUCED STRAIN; SI CMOS; STRAIN GENERATION; STRAIN MOBILITY; STRAINED SILICON; STRAINED SILICON CHANNEL; STRAINED SILICON DEVICES; SUPPLY VOLTAGES; GLOBAL STRAINS; PROCESS INDUCED STRAINS; SSOI;

CARRIER MOBILITY; STRAINED SILICON;

EID: 75849122148     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.61     Document Type: Conference Paper

References (31)

1. International Technology Roadmap for Semiconductors, 2004 Edition, http://www.itrs.net
2. C.K. Maiti, N.B. Chakrabarti and S.K. Ray (eds.): Strained silicon Heterostructures: Materials and Devices, The Institute of Electrical Engineers, London (2001).
3. C.K. Maiti, S. Chattopadhyay and L.K. Bera (eds.): Strained-Si Heterostructure Field Effect Devices, Taylor Francis, New York (2007).
4. S. Tagaki, in: Advanced Gate Stacks for High-Mobility Semiconductors, edited by A. Dimoulas, E. Gusev, P.C. McIntyre and M. Heyns, Springer, Berlin, Heidelberg (2007, p.1
5. A.G. Sabnis and J.T. Clemens: IEDM Techn. Digest 1979, p. 18
6. S. Takagi, A. Toriumi, M. Iwase and H. Tango; IEEE Trans. ED Vol. 41 (1994), p. 2357
7. M.V. Fischetti and S.E. Laux: J. Appl. Phys. Vol. 80 (1996), p. 2234
8. S. Takagi, J.L. Hoyt, J.J. Welser and J.F. Gibbons: J. Appl. Phys. Vol. 80 (1996), p. 1567
9. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie and A. Lochtefeld: J. Appl. Phys. Vol. 97 (2005), p. 011101
10. H.S. Yang, R. Malik, S. Narasima, Y. Li, R. Divakaruni, P. Agnello, S. Allen, A. Antreasyan, J.C. Arnhold, K. Bandy, M. Belyansky, A. Bonnoit, G. Bronner, V. Chan, X. Chen, Z. Chen, D. Chidambarro, A. Chou, W. Clark, S.W. Crowder, B. Engel, H. Harifuchi, S.F. Huang, R. Jagannathan, F.F. Jamin, Y. Kohyama, H. Kuroda, C.W. Lai, H.K. Lee, W-H. Lee, E.H. Lim, W. Lai, A. Mallikarjunan, K. Matsumoto, A. McKnight, J. Nayak, H.Y. Ng, S. Panda, R. Rengarajan, M. Steigerwalt, S. Subbanna, K. Subramanian, J. Sudijono, G. Sudo, S-P. Sun, B. Tessier, Y. Toyoshima, P. Tran, R. Wise, R. Wong, I.Y. Yang, C.H. Wann, L.T. Su: IEDM Techn. Digest 2004, p. 1075
11. Y.C. Yeo: Semicond. Sci. Technol. Vol. 22 (2007), p. S177
12. M. Wiatr, Advanced SOI CMOS transistor technology for high performance microprocessors, MAR08 Meeting of the American Physical Society, Abstr., March 10-14, 2008, New Orleans.
13. M. Horstmann, A. Wei, T. Kammler, J. Höntschel, H. Bierstedt, T. Feudel, K. Frohberg, M. Gerhardt, A. Hellmich, K. Hempel, J. Hohage, P. Javorka, J. Klais, G. Koerner, M. Lenski, A. Neu, R. Otterbach, P. Press, C. Reichel, M. Trentsch, B. Trui, H. Salz, M. Schaller, H.-J. Engelmann, O. Herzog, H. Ruelke, P. Huebler, R. Stephan, D. Greenlaw, M. Raab, N. Kepler, H. Chen, D. Chidambarro, D. Fried, J. Holt, W. Lee, H. Nii, S. Panda, T. Sato, A. Waite, S. Luning, K. Rim, D. Schepis, M. Khare, S.F. Huang, J. Pellerin, and L.T. Su: IEDM Techn. Digest 2005, p. 243
14. K. Mistry, M. Armstrong, C. Auth, S. Cea, T. Coan, T. Ghani, T. Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, K. Zhang, S. Thompson, and M. Bohr, 2004 Symp. on VLSI Technology, Digest, p. 50
15. D.A. Antoniadis, I. Aberg, C. Ni Chleirigh, O.M. Nayfeh, A. Khakifirooz, and J.L. Hoyt, IBM J. Res. & Dev. Vol. 50 (2006), p.363
16. M. Reiche, O. Moutanabbir, C. Himcinschi, S. H. Christiansen, W. Erfurth, U. Gösele, S. Mantl, D. Buca, Q. T. Zhao, R. Loo, D. Nguyen, F. Muster and M. Petzold, in: Semiconductor Wafer Bonding 10, edited by T. Suga et al., ECS Transactions Vol. 16 (8) (2008), p. 311, The Electrochem. Society, Pennington, NJ.
17. S. Mantl, D. Buca, B. Holländer, St. Lenk, N. Hueging, M. Luysberg, R. Carius, R. Loo, M. Caymax, H. Schäfer, I. Radu, M. Reiche, S. Christiansen and U. Gösele, in SiGe and Ge: Materials, Processing, and Devices, edited by GD. Harame et al., ECS Transactions, Vol. 3(7) (2006), p. 1047, The Electrochem. Society, Pennington, NJ.
18. A. Wei, S. Dünkel, R. Boschke, T. Kammler, K. Hempel, J. Rinderknecht, M. Horstmann, I. Cayrefourcq, F. Metral, M. Kennard and E. Guiot, in Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS 3, edited by M.C. Ötztürk et al., ECS Transactions, Vol. 6(1) (2007), p. 15, The Electrochem. Society, Pennington, NJ.
19. A.V-Y. Thean, D. Zhang, V. Vartanian, V. Adams, J. Conner, M. Canonico, H. Desjardin, P. Grudowski, B. Gu, Z.-H. Shi, S. Murphy, G. Spencer, S. Filipiak, D. Goedeke, X-D. Wang, B. Goolsby, V. Dhandapani, L. Prabhu, S. Backer, L-B. La, D. Burnett, T. White, B.-Y. Nguyen, B.E. White, S. Venkatesan, J. Mogab, I. Cayrefourcq and C. Mazure, 2006 Symp. On VLSI Technology, Digest (2006).
20. C. Himcinschi, M. Reiche, R. Scholz, S. Christansen and U. Gösele, Appl. Phys. Lett. Vol. 90, (2007), p.231909
21. L. Huang, J.O. Chu, S.A. Goma, C.P. D'Emic, S.J. Koester, D.F. Canaperi, P.M. Mooney, S.A. Cordes, J.L. Speidel, R.M. Anderson and P. Wong: IEEE Trans. ED Vol. 49 (2002), p. 1566
22. L. Huang, J.O. Chu, S. Goma, C.P. D'Emic, S.J. Koester, D.F. Canaperi and P.M. Mooney: 2001 Symp. On VLSI Technology, Digest, p. 57
23. T. Tezuka, N. Sugiyama and S. Takagi: Appl. Phys. Lett. Vol. 79 (2001), p. 1798
24. N. Sugiyama, T. Numata, N. Hirashita, T. Irisawa and S. Takagi: Jpn. J. Appl. Phys. Vol. 47 (2008), p. 4403
25. M. Reiche, C. Himcinschi, U. Gösele, S. Christiansen, S. Mantl, D. Buca, Q.T. Zhao, S. Feste, R. Loo, D. Nguyen, W. Buchholtz, A. Wei, M. Horstmann, D. Feijoo and P. Storck, in: Silicon-on-Insulator Technology and Devices 13, edited by G.K. Celler et al., ECS Transactions, Vol. 6(4) (2007), p. 339, The Electrochem. Society, Pennington, NJ.
26. K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen and M. Ieong: IEDM Techn. Digest 2003, p. 49
27. S.S. Chung, E.R. Hsieh, D.C. Huang, C.S. Lai, C.H. Tsai, P.W. Liu, Y.H. Lin, C.T. Tsai, G.H. Ma, S.C. Chien and S.W. Sun: IEDM Techn. Digest 2008, p. 435
28. M. Ferrier, R. Clerc, L. Lucci, Q. Rafhay, G. Pananakakis, G. Ghibaudo, F. Boeuf and T. Skotnicki: IEEE Trans. Nanotechnol. Vol. 6 (2007), p. 613
29. M. Ieong, J. Kedzierski, Z. Ren, B. Doris, T. Kanarsky and P. Wong: 2002 Internat. Conf. solid State Dev. And Mat. (SSDM), Extend. Abstr., p. 136
30. O. Moutanabbir, M. Reiche, W. Erfurth, N. Zakharov, U. Gösele, F. Naumann, M. Petzold, M. Motohashi, A. Tarun, N. Hayazawa, and S. Kawata: Paper presented at the EUROSOI 2009, Gothenborg, Solid-State Electron. (in press)
31. S.E. Thompson, G. Sun, K. Wu, J. Lim and T. Nishida: IEDM Techn. Digest 2004, p. 221