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Volumn 47, Issue 6 PART 1, 2008, Pages 4403-4407
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Variation of threshold voltage in strained Si metal-oxide-semiconductor field-effect transistors induced by non-uniform strain distribution in strained-Si channels on silicon-germanium-on-insulator substrates
a
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Author keywords
Ge condensation; MOSFET; Raman spectroscopy; SiGe on insulator; Strained silicon; Threshold voltage
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Indexed keywords
CONDENSATION;
DIELECTRIC DEVICES;
ELECTRIC CONDUCTIVITY;
FIELD EFFECT TRANSISTORS;
GERMANIUM;
MOSFET DEVICES;
SEMICONDUCTING GERMANIUM COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SEMICONDUCTOR MATERIALS;
SILICON;
SILICON ALLOYS;
SUBSTRATES;
THRESHOLD VOLTAGE;
TRANSISTORS;
CHANNEL LAYERS;
CONDENSATION PROCESSES;
CRYSTAL LAYERS;
GE CONDENSATION;
GE CONDENSATIONS;
INSULATOR SUBSTRATES;
LATTICE RELAXATIONS;
LATTICE SPACINGS;
MOSFET;
MOSFETS;
NON-UNIFORM;
RELAXATION RATIOS;
SIGE ON INSULATOR;
SILICON-GERMANIUM;
STRAIN DISTRIBUTIONS;
STRAINED SILICON;
STRAINED SIS;
SEMICONDUCTING SILICON;
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EID: 55049126138
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.4403 Document Type: Article |
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Times cited : (5)
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References (18)
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