Strain field and related roughness formation in SiGe relaxed buffer layers

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 117-119

  Sawano, K ^a   Usami, N ^b   Arimoto, K ^c   Nakagawa, K ^c   Shiraki, Y ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Crosshatch roughness; SiGe; Strain distribution; Strained Si

Indexed keywords

GROWTH KINETICS; HETEROJUNCTIONS; MORPHOLOGY; RAMAN SCATTERING; STRAIN; SURFACE ROUGHNESS; THICKNESS CONTROL; THIN FILMS;

BUFFER LAYERS; CROSSHATCH SURFACE ROUGHNESS; RAMAN MAPPING MEASUREMENT; SIGE; STRAIN DISTRIBUTION WAVELENGTH; STRAIN FIELD;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33646108131     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.414     Document Type: Article

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