Fabrication study of AIN solar-blind (<280nm) MSM photodetectors grown by low-temperature deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 1, 2010, Pages 224-228

  Chen, Meei Ru ^a   Chang, S H ^a   Chen, Tzu Chieh ^a   Hsu, Chih Hsiang ^a   Kao, H L ^a   Chyi, Jen Inn ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND GAPS; DEEP UV; EPITAXIAL THIN FILMS; GAN/SAPPHIRE; HELICON SPUTTERING; III-NITRIDES; LOW TEMPERATURES; LOW-TEMPERATURE DEPOSITION; LOW-TEMPERATURE GROWN; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MSM DEVICES; MSM PHOTODETECTOR; OPTICAL POWER; ORDERS OF MAGNITUDE; SOLAR BLIND;

EPITAXIAL FILMS; HETEROJUNCTIONS; NITRIDES; OPTOELECTRONIC DEVICES;

PHOTODETECTORS;

EID: 74549146345     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925244     Document Type: Article

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