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Volumn 203, Issue 7, 2006, Pages 1603-1606

Strain-relaxation in NH 3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates

Author keywords

[No Author keywords available]

Indexed keywords

ALN EPILAYERS; GAN EPITAXIAL TEMPLATES; STRAIN-RELAXATION;

EID: 33745032579     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565289     Document Type: Article
Times cited : (17)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.