Barrier height control for electron field emission by growing an ultra-thin AlN layer on GaN/Mo

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 128-130

  Nishida, S ^a   Yamashita, T ^a   Hasegawa, S ^a   Asahi, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

AlN; Field emission; GaN; MBE; Mo

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FIELD EMISSION DISPLAYS; GALLIUM NITRIDE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SUBSTRATES;

BARRIER HEIGHT CONTROL; ELECTRON FIELD EMISSION; LOW OPERATION VOLTAGES; ULTRA THIN LAYERS;

ULTRATHIN FILMS;

EID: 4544320835     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.023     Document Type: Article

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