Very high quality AIN grown on (0001) sapphire by metal-organic vapor phase epitaxy

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Xi, Y A ^a   Chen, K X ^a   Mont, F ^b   Kim, J K ^b   Wetzel, C ^a   Schubert, E F ^b   Liu, W ^c   Li, X ^c   Smart, J A ^c  

^a Research Rensselaer Polytechnic Institute   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Crystal IS Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL TRANSMISSION SPECTRUM; SAWTOOTH SHAPED TERRACE EDGES; X-RAY ROCKING CURVES;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; LIGHT TRANSMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOSENSITIVE GLASS; SAPPHIRE; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 33748493611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345256     Document Type: Article

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