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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2148-2151

AlN MSM and Schottky photodetectors

(7) Dahal, R a Li, J a Fan, Z Y a Nakarmi, M L a Al Tahtamouni, T M a Lin, J Y a Jiang, H X a

a KANSAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; ALN; CUTOFF WAVELENGTHS; DEEP ULTRAVIOLET; DETECTIVITY; HIGH BREAKDOWN VOLTAGE; HIGH QUALITY; HIGH THERMAL; MATERIAL PROPERTY; METAL SEMICONDUCTOR METAL; OPTO-ELECTRONICS; PEAK RESPONSIVITY; REJECTION RATIOS; RESPONSIVITY; SCHOTTKY BARRIER DETECTORS; SCHOTTKY BARRIERS; SCHOTTKY PHOTODETECTORS; SIC SUBSTRATES; ZERO BIAS;

EPILAYERS; NITRIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74549220720 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778489 Document Type: Conference Paper

Times cited : (15)

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