Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 1-7

  Lai, Po Hsien ^b   Chen, Chun Wei ^b   Kao, Chung I ^b   Fu, Ssu I ^b   Tsai, Yan Ying ^b   Hung, Ching Wen ^b   Yen, Chih Hung ^b   Chuang, Hung Ming ^b   Cheng, Shiou Ying ^a,c   Liu, Wen Chau ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL ILAN UNIVERSITY   (Taiwan)

Author keywords

(NH4)2sx; Pseudomorphic high electron mobility transistor (PHEMT); Sulfur treatment; Temperature dependent characteristics

Indexed keywords

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT); SULFUR TREATMENT; TEMPERATURE DEPENDENT CHARACTERISTICS;

ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; MICROWAVES; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SULFUR; THERMAL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33744787828     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860654     Document Type: Article

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