Fringing effects of V-shape gate metal on GaAs/InGa/PInGaAs doped-channel field-effect transistors

Semiconductor Science and Technology

Volumn 20, Issue 9, 2005, Pages 932-937

  Chen, H R ^a   Chen, W T ^b   Hsu, M K ^b   Tan, S W ^b   Lour, W S ^b  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HETEROJUNCTIONS; PHOTORESISTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

OUTPUT CONDUCTANCE; SACRIFICIAL LAYERS; SHORT-CHANNEL EFFECTS; VOLTAGE GAIN;

FIELD EFFECT TRANSISTORS;

EID: 23944525428     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/9/008     Document Type: Article

References (10)

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