Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

Solid-State Electronics

Volumn 51, Issue 6, 2007, Pages 882-887

  Huang, Jun Chin ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Huang, Dong Hai ^a   Huang, Ming Feng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

DCFL; Depletion mode; Enhancement mode; Monolithic inverter; Noise margin; Power dissipation

Indexed keywords

ENERGY DISSIPATION; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

DEPLETION-MODE; ENHANCEMENT-MODE; MONOLITHIC INVERTER; NOISE MARGIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34250729674     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.04.015     Document Type: Article

References (14)

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