Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Kuzmik, J ^a,b   Pozzovivo, G ^a   Carlin, J F ^c   Gonschore, M ^c   Grandjeak, M ^c   Feltin, E N ^c   Strasser, G ^a   Pogany, D ^a   Gornik, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CONTACT SEPARATION; CURRENT INJECTIONS; DRAIN DISTANCE; GAN BUFFER; GAN BUFFER LAYERS; SUB-THRESHOLD LEAKAGE;

DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73849127526     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880754     Document Type: Article

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