A closed-form model of the drain-voltage dependence of the off-state channel electric field in a HEMT with a field plate

IEEE Transactions on Electron Devices

Volumn 53, Issue 10, 2006, Pages 2430-2437

  Karmalkar, Shreepad ^a   Soudabi, N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Analytical modeling; Field distribution; Field plate; High electron mobility transistor (HEMT)

Indexed keywords

ANALYTICAL MODELING; CLOSED-FORM MODELS; CRITICAL FIELDS; DEPLETION LAYERS; DEVICE STRUCTURES; ELECTRIC-FIELD; FIELD DISTRIBUTION; FIELD PLATE; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MODEL FITS; P-N JUNCTIONS; PHYSICAL PARAMETERS; SQUARE ROOTS; TRIANGULAR DISTRIBUTIONS; TWO-DIMENSIONAL SIMULATIONS; VOLTAGE DEPENDENCES;

ELECTRIC FIELDS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; PLATES (STRUCTURAL COMPONENTS); RESONANT TUNNELING; SEMICONDUCTOR JUNCTIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 35148839281     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882273     Document Type: Article

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