Influence of RF power on the structure and optical properties of sputtered hafnium dioxide thin films

Physica B: Condensed Matter

Volumn 405, Issue 4, 2010, Pages 1108-1112

  Liu, Wenting ^a   Liu, Zhengtang ^a   Yan, Feng ^a   Tan, Tingting ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Band gap energy; HfO2 thin films; Infrared transmission; Refractive index; RF power

Indexed keywords

ANTI REFLECTIVE COATINGS; ANTIREFLECTIVE EFFECT; BAND GAP ENERGY; FOURIER TRANSFORM INFRARED SPECTRUMS; HAFNIUM DIOXIDE; HFO2 THIN FILMS; MINIMUM VALUE; POLYCRYSTALLINE; RADIO FREQUENCY MAGNETRON SPUTTERING; REFRACTIVE INDEX AND BAND GAP; RF-POWER; TRANSMISSION SPECTRUMS; WAVEBANDS;

CRYSTALLITE SIZE; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; INFRARED TRANSMISSION; LIGHT REFRACTION; MAGNETRON SPUTTERING; REFRACTIVE INDEX; REFRACTOMETERS; THIN FILM DEVICES; VAPOR DEPOSITION; X RAY DIFFRACTION;

THIN FILMS;

EID: 73749084457     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.10.059     Document Type: Article

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