Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Molle, Alessandro ^a   Lamagna, Luca ^a   Spiga, Sabina ^a   Fanciulli, Marco ^a,b   Brammertz, Guy ^c   Meuris, Marc ^c  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c IMEC   (Belgium)

Author keywords

Atomic H; GaAs; High k; High mobility; III V; Interface study; Logics; Surface preparation; XPS

Indexed keywords

ACTIVE INTERFACE; CHEMICAL DETAILS; COMPOSITIONAL FEATURES; CONCENTRATION OF; GAAS; GAAS SUBSTRATES; HIGH MOBILITY; III-V COMPOUNDS; IN-SITU; INTERFACE ANALYSIS; INTERFACE COMPOSITION; INTERFACE LAYER; INTERFACE LEVEL; METAL OXIDE SEMICONDUCTOR; MOLECULAR BEAM DEPOSITION; OXIDE DEPOSITION; OXYGEN BONDS; PHYSICAL NATURE; SURFACE PREPARATION; ULTRATHIN LAYERS; XPS;

ATOMS; CHEMICAL MODIFICATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; MOS DEVICES; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SURFACE CLEANING; SURFACES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE CHEMISTRY;

EID: 73649102774     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.069     Document Type: Article

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