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Volumn 71, Issue 16, 2005, Pages

Imaging of c(8×2)(4×6) GaAs (001) surface with noncontact atomic force microscopy

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[No Author keywords available]

Indexed keywords


EID: 28744440011     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.165419     Document Type: Article
Times cited : (22)

References (43)
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    • Diffraction spots in LEED images of GaAs surfaces processed at temperatures close to 900 K often show streaking along half-order rows, which has been assigned to the mixture of c (8×2) and (4×2) phases, which consist of identical structural (4×2) subunits, most probably by analogy to the c (2×8) (2×4) GaAs phase. On the other hand, microscopic studies as a rule show only (4×1) symmetry on that surface. Depending on the characterization technique and the preparation method used, different authors use different Wood's reconstruction symbols likely for the same general surface structure.
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    • We have made several unsuccessful attempts to image GaAs surface with NC-AFM as only structureless and very rough images have been seen, despite the fact that LEED produced a very sharp (4×1) pattern. Since the samples used were cut out from heavy-doped wafers and postannealed, the problem was most probably associated with segregation of electrically active Si dopants to the surface, which caused excessive folding of surface electrostatic potential in a mesoscale.
    • We have made several unsuccessful attempts to image GaAs surface with NC-AFM as only structureless and very rough images have been seen, despite the fact that LEED produced a very sharp (4×1) pattern. Since the samples used were cut out from heavy-doped wafers and postannealed, the problem was most probably associated with segregation of electrically active Si dopants to the surface, which caused excessive folding of surface electrostatic potential in a mesoscale.
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    • note
    • In the course of a literature survey concerning Ga -rich GaAs surfaces, we noticed that LEED diffraction patterns of these surfaces are rarely published. This often makes the direct comparisons difficult since, even for sputter-cleaned GaAs (001), there are many differently reconstructed surfaces observed. Apart from the ones discussed in the paper, incidentally we also saw (4×1), streaky (4×2), (4×3), (3×2), as well as mixed and faceted surfaces. With insufficient attention paid to surface temperature distribution, different reconstructions existed simultaneously on different parts of the sample. Some of those reconstructions might be related to adsorbates, and some to segregation of bulk impurities since they were observed after prolonged postannealing of Si -doped samples. Of course, one can compare scanning-probe real-space images if available, but this is straightforward only in the positive case, i.e., when the images show the same structure. In the negative case, i.e., when the images are different, the result of the comparison is ambiguous since the differences may be caused by different tip termination, different sample bias, or both.


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