Stability and interface quality of Ge O2 films grown on Ge by atomic oxygen assisted deposition

Journal of Chemical Physics

Volumn 129, Issue 1, 2008, Pages

  Molle, Alessandro ^a   Spiga, Sabina ^a   Fanciulli, Marco ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; STOICHIOMETRY;

(E ,3E) PROCESS; AMBIENT AIR (AA); AMERICAN INSTITUTE OF PHYSICS (AIP); ASSISTED DEPOSITION; ATOMIC OXYGEN (AO); INTERFACE QUALITY; MOLECULAR DEPOSITION;

GERMANIUM;

EID: 46749092958     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2955446     Document Type: Article

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