Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3 N4

Applied Physics Letters

Volumn 90, Issue 19, 2007, Pages

  Li, W P ^a   Wang, X W ^a   Liu, Y X ^a   Shim, S I ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE (C-V) MEASUREMENT; INTERFACE STATE DENSITY; SEMICONDUCTOR CAPACITORS; SURFACE INVERSION;

CAPACITORS; ELECTRIC CONDUCTANCE; GATE DIELECTRICS; HYSTERESIS; SILICON NITRIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34248327893     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2737374     Document Type: Article

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