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Volumn 4, Issue 4, 2008, Pages 451-454

Doping-dependent electrical characteristics of SnO2 nanowires

(3) Wan, Qing a,b Dattoli, Eric a Lu, Wei a

a UNIVERSITY OF MICHIGAN (United States)

b HUNAN UNIVERSITY (China)

Author keywords

Conductors; Doping; Nanowires; Photodetectors; Transistors

Indexed keywords

ANTIMONY COMPOUNDS; DOPING (ADDITIVES); ELECTRIC CONDUCTORS; PHOTODETECTORS; TIN DIOXIDE; TRANSISTORS;

HIGH PERFORMANCE NANOWIRE TRANSISTORS; METAL ELECTRODES; PHOTORESPONSIVITY; TIN DIOXIDE NANOWIRES;

NANOWIRES;

NANOTUBE; TIN DERIVATIVE; TIN DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELD; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC WIRING; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELDS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; TIN COMPOUNDS;

EID: 43149087294 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.200700753 Document Type: Article

Times cited : (108)

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