Modifying ALE grown In 2 O 3 films by benzoyl fluoride pulses

Applied Surface Science

Volumn 112, Issue , 1997, Pages 231-235

  Asikainen, Timo ^b   Ritala, Mikko ^a   Li, Wei Min ^a   Lappalainen, Reijo ^a   Leskelä, Markku ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b NONE

Author keywords

Atomic layer epitaxy; Benzoyl fluoride; Indium oxide

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FILM GROWTH; FLUORINE COMPOUNDS; OXIDES; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE STRUCTURE; THIN FILMS; TRANSPARENCY;

ATOMIC LAYER EPITAXY; BENZOYL FLUORIDE; INDIUM OXIDE; NUCLEAR RESONANCE BROADENING METHOD;

SURFACE TREATMENT;

EID: 0031546858     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00986-5     Document Type: Article

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