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Volumn , Issue , 2008, Pages

Dependence of dielectric charging on film thickness and deposition conditions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 69649086900     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2008.4958446     Document Type: Conference Paper
Times cited : (3)

References (7)
  • 2
    • 0032208481 scopus 로고    scopus 로고
    • Parasitic charging of dielectric surfaces in capacitive microelectromechanical systems (MEMS)
    • PII S0924424798001551
    • J. Wibbeler, G. Pfeifer and M. Hietschold, "Parasitic charging of dielectric surfaces in capacitive microelectromechanical systems (MEMS)", Sensors and Actuators A, vol.71, pp 74-80, 1998. (Pubitemid 128399347)
    • (1998) Sensors and Actuators, A: Physical , vol.71 , Issue.1-2 , pp. 74-80
    • Wibbeler, J.1    Pfeifer, G.2    Hietschold, M.3
  • 5
    • 34250703152 scopus 로고    scopus 로고
    • Dielectric charging in radio frequency microelectromechanical system capacitive switches: A study of material properties and device performance
    • G. Papaioannou, J. Papapolymerou, P. Pons and R. Plana, "Dielectric charging in radio frequency microelectromechanical system capacitive switches: A study of material properties and device performance", Applied Physics Letters, vol.90, pp 233507, 2007
    • (2007) Applied Physics Letters , vol.90 , pp. 233507
    • Papaioannou, G.1    Papapolymerou, J.2    Pons, P.3    Plana, R.4
  • 7
    • 0012088327 scopus 로고
    • Current induced drift mechanism in amorphous SiNx:H thin film diodes
    • J. M. Shannon, S. C. Deane, B. McGarvey, and J. N. Sandoe, "Current induced drift mechanism in amorphous SiNx:H thin film diodes", Applied Physics Letters, vol.65, pp. 2978-2980, 1994
    • (1994) Applied Physics Letters , vol.65 , pp. 2978-2980
    • Shannon, J.M.1    Deane, S.C.2    McGarvey, B.3    Sandoe, J.N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.