Impact of humidity on dielectric charging in RF MEMS capacitive switches

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 5, 2009, Pages 299-301

  Peng, Zhen ^a   Palego, Cristiano ^a   Hwang, James C M ^a   Forehand, David I ^b   Goldsmith, Charles L ^b   Moody, Cody ^c   Malczewski, Andrew ^c   Pillans, Brandon W ^c   Daigler, Richard ^d   Papapolymerou, John ^d  

^a LEHIGH UNIVERSITY   (United States)

^b MEMtronics Inc   (United States)

^c RAYTHEON COMPANY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Charge injection; Dielectric films; Dielectric materials; Humidity; Microelectromechanical devices; Microwave devices; Switches

Indexed keywords

AMBIENT ATMOSPHERE; DIELECTRIC CHARGING; DRY AIR; HUMIDITY; HUMIDITY LEVELS; NOVEL TECHNIQUES; QUANTITATIVE RESULT; RF MEMS CAPACITIVE SWITCHES; SILICON DIOXIDE; SURFACE CHARGING;

DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRIC FIELDS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROWAVE DEVICES; MICROWAVES; MOISTURE; SILICA; SILICON NITRIDE; SURFACE CHARGE; SURFACES;

ELECTRIC SWITCHES;

EID: 67649197404     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2017595     Document Type: Article

References (3)

1. C. L. Goldsmith, D. I. Forehand, Z. Peng, J. C M. Hwang, and J. L. Ebel, "High-cycle life testing of RF MEMS switches," in IEEE MTT-S Int. Dig., Jun. 2007, pp. 1805-1808.
2. Z. Peng, X. Yuan, J. C. M. Hwang, D. Forehand, and C. L. Goldsmith, "Top vs. bottom charging of dielectric in RF MEMS capacitive switches," in Proc. Asia Pacific Microw. Conf., Dec. 2006, pp. 1535-1538.
3. C. Cheung, K. Luo, D. Li, P. Ngo, L. Dang, J. Uyeda, J. Wang, and M. Barsky, "Silicon nitride surface preparation to prevent photoresist blister defects," in GaAs Manufact Technol. Conf. Dig., 2005, p. 14.10.