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Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 567-573

New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

b NONE (South Korea)

Author keywords

AlGaN; Diode; GaN; Rectifier; Schottky; Trench

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC RECTIFIERS; EVAPORATION; GALLIUM NITRIDE; HETEROJUNCTIONS; PLATINUM;

SCHOTTKY CONTACT; SCHOTTKY METAL; TRENCH; VOLTAGE DROP;

SCHOTTKY BARRIER DIODES;

EID: 33845430484 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2006.09.002 Document Type: Article

Times cited : (10)

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