Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Chen, Wanjun ^a   Wong, King Yuen ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMT; DC-DC BOOST CONVERTERS; EPITAXIAL WAFERS; FABRICATION PROCESS; FIELD EFFECTS; MONOLITHIC INTEGRATIONS; MONOLITHICALLY INTEGRATED; SPECIFIC ON RESISTANCES; SWITCH-MODE POWER SUPPLIES; TURN-ON VOLTAGES;

ELECTRON DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; MONOLITHIC INTEGRATED CIRCUITS; POWER CONVERTERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

ELECTRIC RECTIFIERS;

EID: 64549163189     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796635     Document Type: Conference Paper

References (10)

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