Source injection induced off-State breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Wang, Maojun ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMT; ALGAN/GAN HEMTS; BREAK DOWN VOLTAGES; CHANNEL REGIONS; FLUORINE IONS;

ELECTRIC CONDUCTIVITY; ELECTRON DEVICES; GALLIUM NITRIDE; IMPACT IONIZATION; ION BOMBARDMENT; ION IMPLANTATION; IONIZATION OF GASES; MOSFET DEVICES;

FLUORINE;

EID: 64549149263     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796637     Document Type: Conference Paper

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