High breakdown voltage GaN schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 247-250

  Lee, Seung Chul ^a   Ha, Min Woo ^a   Her, Jin Cherl ^a   Kim, Soo Seong ^a   Lim, Ji Yong ^a   Seo, Kwang Seok ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

BREAKDOWN VOLTAGES; DESIGN PARAMETERS; FLOATING METAL RINGS;

ELECTRIC POTENTIAL;

EID: 27744603977     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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