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Volumn , Issue , 2009, Pages

Wide bandgap GaN smart power chip technology

Author keywords

GaN; Power converter; Smart power; Voltage reference and planar integration; Wide bandgap

Indexed keywords

GAN; MONOLITHICALLY INTEGRATED; PLANAR INTEGRATIONS; REFERENCE VOLTAGES; SMART POWER; SMART POWER APPLICATIONS; VOLTAGE REFERENCE; WIDE BAND GAP;

EID: 84887431587     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 1
    • 33947182926 scopus 로고    scopus 로고
    • Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
    • Sep.
    • Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancement Mode," IEEE Trans. Electron Devices, Vol. 53, No. 9, pp. 2207-2215, Sep. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.9 , pp. 2207-2215
    • Cai, Y.1    Zhou, Y.G.2    Lau, K.M.3    Chen, K.J.4
  • 2
    • 22944461728 scopus 로고    scopus 로고
    • High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
    • Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment," IEEE Electron Device Letters, Vol. 26, No. 7, pp. 435-437, 2005.
    • (2005) IEEE Electron Device Letters , vol.26 , Issue.7 , pp. 435-437
    • Cai, Y.1    Zhou, Y.G.2    Chen, K.J.3    Lau, K.M.4
  • 3
    • 46049087530 scopus 로고    scopus 로고
    • High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
    • W. Chen, K.-Y. Wong, W. Huang, and K. J. Chen, "High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors," Appl. Phys. Lett., Vol. 92, 253501, 2008.
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 253501
    • Chen, W.1    Wong, K.-Y.2    Huang, W.3    Chen, K.J.4
  • 4
    • 64549163189 scopus 로고    scopus 로고
    • Monolithic integration of lateral field effect rectifier with normally-off HEMT for GaN-on-si switch-mode power supply converters
    • San Francisco, USA, Dec. 15-17
    • W. Chen, K.-Y. Wong, and K. J. Chen, "Monolithic Integration of Lateral Field Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters," 2008 Int. Electron Device Meeting (IEDM08), San Francisco, USA, Dec. 15-17, 2008.
    • (2008) 2008 Int. Electron Device Meeting (IEDM08)
    • Chen, W.1    Wong, K.-Y.2    Chen, K.J.3
  • 5
    • 33947146088 scopus 로고    scopus 로고
    • Monolithically integrated enhancement/Depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
    • Sep.
    • Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen "Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment," IEEE Trans. Electron Devices, Vol. 53, No. 9, pp. 2223-2230, Sep. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.9 , pp. 2223-2230
    • Cai, Y.1    Cheng, Z.2    Tang, W.C.K.3    Lau, K.M.4    Chen, K.J.5
  • 6
    • 34247574775 scopus 로고    scopus 로고
    • High temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
    • May
    • Y, Cai, Z. Cheng, Z. Yang, W. C.-W. Tang, K. M. Lau, and K. J. Chen, "High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits," IEEE Electron Device Lett., Vol. 28, No. 5, pp. 328-331, May, 2007.
    • (2007) IEEE Electron Device Lett. , vol.28 , Issue.5 , pp. 328-331
    • Cai, Y.1    Cheng, Z.2    Yang, Z.3    Tang, W.C.-W.4    Lau, K.M.5    Chen, K.J.6
  • 7
    • 33746502580 scopus 로고    scopus 로고
    • Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
    • Aug.
    • R. Wang, Y. Cai, W. Tang, K. M. Lau, and K. J. Chen, "Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment," IEEE Electron Device Letters, Vol. 27, No. 8, pp. 633-635, Aug. 2006.
    • (2006) IEEE Electron Device Letters , vol.27 , Issue.8 , pp. 633-635
    • Wang, R.1    Cai, Y.2    Tang, W.3    Lau, K.M.4    Chen, K.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.