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High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
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Monolithic integration of lateral field effect rectifier with normally-off HEMT for GaN-on-si switch-mode power supply converters
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San Francisco, USA, Dec. 15-17
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W. Chen, K.-Y. Wong, and K. J. Chen, "Monolithic Integration of Lateral Field Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters," 2008 Int. Electron Device Meeting (IEDM08), San Francisco, USA, Dec. 15-17, 2008.
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Monolithically integrated enhancement/Depletion-mode AlGaN/GaN HEMT inverters and ring oscillators using CF4 plasma treatment
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Sep.
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Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen "Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment," IEEE Trans. Electron Devices, Vol. 53, No. 9, pp. 2223-2230, Sep. 2006.
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High temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits
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May
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Y, Cai, Z. Cheng, Z. Yang, W. C.-W. Tang, K. M. Lau, and K. J. Chen, "High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits," IEEE Electron Device Lett., Vol. 28, No. 5, pp. 328-331, May, 2007.
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Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
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R. Wang, Y. Cai, W. Tang, K. M. Lau, and K. J. Chen, "Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment," IEEE Electron Device Letters, Vol. 27, No. 8, pp. 633-635, Aug. 2006.
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