Formation of Ni silicide at room temperature studied by laser atom probe tomography: Nucleation and lateral growth

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2517-2522

  Hoummada, K ^a   Mangelinck, D ^a   Cadel, E ^b   Perrin Pellegrino, C ^a   Blavette, D ^b   Deconihout, B ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITÉ DE ROUEN   (France)

Author keywords

Atom probe tomography; Nickel silicide

Indexed keywords

CALORIMETRY; GROWTH (MATERIALS); LASERS; NICKEL; NUCLEATION; THERMAL EFFECTS; THICKNESS MEASUREMENT; TOMOGRAPHY;

LASER ATOM PROBE TOMOGRAPHY; NICKEL SILICIDES;

SILICIDES;

EID: 34548825634     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.051     Document Type: Article

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