Probing the carrier capture rate of a single quantum level

Science

Volumn 319, Issue 5862, 2008, Pages 436-438

  Berthe, M ^a   Stiufiuc, R ^a,b   Grandidier, B ^a   Deresmes, D ^a   Delerue, C ^a   Stievenard D ^a  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b BABE BOLYAI UNIVERSITY   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; NANOWIRE; QUANTUM DOT; SILICON;

ELECTRON; ENERGY; PROBE; QUANTUM MECHANICS; SCANNING TUNNELLING MICROSCOPY;

ARTICLE; DYNAMICS; ELECTRON; ELECTRONICS; ENERGY; NANOTECHNOLOGY; PRIORITY JOURNAL; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR;

EID: 38549158402     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1151186     Document Type: Article

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25. R.S. acknowledges the financial support of the Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée.