Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1339-1342

  Biberger, Roland ^a   Benstetter, Guenther ^a   Schweinboeck, Thomas ^b   Breitschopf, Peter ^a   Goebel, Holger ^c  

^a DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c HELMUT SCHMIDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE;

CONTACT MODES; CONTACT SCANNING; DOPANT PROFILING; SCANNING CAPACITANCE MICROSCOPY; TWO DIFFERENT METHODS;

SCANNING;

EID: 50249102879     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.013     Document Type: Article

References (6)

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3. Garcia R., and Perez R. Dynamic atomic force microscopy methods. Surf Sci Rep 47 (2002) 197-301
4. Breitschopf P., Benstetter G., Knoll B., and Frammelsberger W. Intermittent contact scanning capacitance microscopy - an improved method for 2D doping profiling. Microelectron Reliab 45 (2005) 1568-1571
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6. Bassani R., and D'Acunto M. Nanotribology: tip-sample wear under adhesive contact. Tribiol Int 33 (2000) 443-452