Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2583-2586

  Pauliac Vaujour, S ^a   Comboroure, C ^a   Vizioz, C ^a   Barnola, S ^a   Brianceau, P ^a   Alvaro, V Maffini ^a   Dupr C ^a   Ernst, T ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; ANISOTROPY; ASPECT RATIO; CHARGE COUPLED DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ETCHING; FABRICATION; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; MULTILAYERS; NANOWIRES; PHOTORESISTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

ACTIVE AREAS; ANISOTROPIC ETCH; CRITICAL DIMENSIONS; ELECTROSTATIC CONTROLS; ETCH PROCESSES; HIGH ASPECT RATIOS; HIGH RESOLUTION LITHOGRAPHIES; HYBRID LITHOGRAPHIES; ISOTROPIC ETCHINGS; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; MOS FETS; NOVEL ARCHITECTURES; ONE HANDS; POWER CONSUMPTIONS; RESIST THICKNESSES; RESIST TRIMMINGS; SILICON NANOWIRES; THIN OXIDES; TWO WAYS; ULTRA VIOLETS;

FIELD EFFECT TRANSISTORS;

EID: 57249094060     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021392     Document Type: Article

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