Pushing extreme ultraviolet lithography development beyond 22 nm half pitch

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2911-2915

  Naulleau, Patrick P ^a   Anderson, Christopher N ^b   Baclea An, Lorie Mae ^a   Denham, Paul ^a   George, Simi ^a   Goldberg, Kenneth A ^a   Goldstein, Michael ^c   Hoef, Brian ^a   Jones, Gideon ^a   Koh, Chawon ^c   La Fontaine, Bruno ^d   Montgomery, Warren ^c   Wallow, Tom ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SEMATECH   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPOSURE TOOL; EXTREME ULTRAVIOLET; LINE EDGE ROUGHNESS; MASK PATTERNING; NUMERICAL APERTURE; PROJECTION OPTICS; RESIST DEVELOPMENT; RESOLUTION ENHANCEMENT; RESOLUTION LIMITS; SEMATECH;

PHOTOMASKS; PHOTORESISTS; SURFACE ROUGHNESS; ULTRAVIOLET DEVICES;

ROUGHNESS MEASUREMENT;

EID: 72849124049     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3237092     Document Type: Conference Paper

References (14)

1. H. Meiling et al., Proc. SPIE 6151, 615108 (2006).
2. M. Miura, K. Murakami, K. Suzuki, Y. Kohama, Y. Ohkubo, and T. Asami, Proc. SPIE 6151, 615105 (2006).
3. P. Naulleau et al., Proc. SPIE 5374, 881 (2004).
4. A. Brunton et al., Proc. SPIE 5751, 78 (2005).
5. H. Oizumi, Y. Tanaka, I. Nishiyama, H. Kondo, and K. Murakami, Proc. SPIE 5751, 102 (2005).
6. Prolith is a registered trademark of KLA-Tencor Corporation, 160 Rio Robles, San Jose, California 95134.
7. C. Koh et al., " Assessment of EUV resist readiness for 32 nm hp manufacturing, and extendibility study of EUV ADT using state-of-the-art resist.," Proc. SPIE 7271, 727124 (2009).
8. P. Naulleau, J. Cain, K. Dean, and K. Goldberg, Proc. SPIE 6151, 61512Z (2006).
9. J. Cain, P. Naulleau, E. Gullikson, and C. Spanos, J. Vac. Sci. Technol. B 24, 1234 (2006).
10. N. Beaudry and T. Milster, Proc. SPIE 3676, 653 (1999).
11. P. Naulleau, Appl. Opt. 43, 4025 (2004).
12. P. Naulleau, D. Niakoula, and G. Zhang, J. Vac. Sci. Technol. B 26, 1289 (2008).
13. P. Naulleau, " Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography.," Appl. Opt. 48, 3302 (2009).
14. Michael Goldstein, Russ Hudyma, Patrick Naulleau, and Stefan Wurm, Opt. Lett. 33, 2995 (2008).