Assessment of EUV resist readiness for 32nm hp manufacturing, and extendibility study of EUV ADT using state-of-the-art resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Koh, Chawon ^a   Ren, Liping ^a   Georger, Jacque ^a   Goodwin, Frank ^a   Wurm, Stefan ^a   Pierson, Bill ^b   Park, Joo On ^c   Wallow, Tom ^d   Younkin, Todd R ^e   Naulleau, Patrick ^f  

^a SEMATECH   (United States)

^b ASML US Inc   (United States)

^c SAMSUNG Electronics   (South Korea)

^d ADVANCED MICRO DEVICES   (United States)

^e INTEL CORPORATION   (United States)

^f LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

32nm hp manufacturability; ADT (alpha demo tool); EUV extendibility; EUVL; Extreme ultraviolet lithography; Photoresist

Indexed keywords

32NM HP MANUFACTURABILITY; ADT (ALPHA-DEMO TOOL); COMMON PROCESS; CRITICAL DIMENSION UNIFORMITIES; DEPTH OF FOCUS; EUV EXTENDIBILITY; EUV RESISTS; EUVL; EXPOSURE LATITUDE; FULL-FIELD; MASK ERROR ENHANCEMENT FACTORS; POST-EXPOSURE; POSTEXPOSURE BAKE; PROCESS MARGINS; RESIST PROCESS; SPIN-ON; THICK RESIST; UNDERLAYER;

ELECTROLUMINESCENCE; LASER PULSES; MASKS; PHOTORESISTORS; PHOTORESISTS; SURFACE TREATMENT; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 67149106172     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814314     Document Type: Conference Paper

References (9)

1. Ma, A., Park, J., Dean, K., Wurm, S., Naulleau, P., "Benchmarking Commercial EUVL Resists at SEMATECH," Proc. SPIE 6921,692130 (2008).
2. Hendrickx, E., Goethals, A.M., Niroomand, A., et al., "Full field EUV lithography: Lessons learnt on EUV ADT imaging, EUV resist, and EUV reticles," Proc. SPIE 7140, 714007 (2008).
3. Kawamura, D., Kaneyama, K., Kobayashi, S., Oizumi, H., and Itani, T., "Current benchmarking results of EUV resist at Selete," Proc. SPIE 7140,714008 (2008).
4. Koh, C., Wurm, S., Park, J., Ma, A., and Nalleau, P., "Sub-22nm Half-pitch (HP) EUV Resist Imaging Results," EUVL Symposium (2008).
5. Pierson, B., Wallow, T., Mizuno, H., et al., "EUV Resist Performance on the ASML ADT and LBNL MET," EUVL Symposium (2008).
6. http://www.itrs.net/
7. Wallow, T., Higgins, C, Brainard, R., Perrillo, K., et al., "Evaluation of EUV resist materials for use at the 32 nm half-pitch node," Proc. SPIE 6921,6921 IF (2008).
8. Younkin, T., "Optimizing RLS," EUV Resist TWG at EUVL Symposium (2008).
9. Chandhok, M., Frasure, K., Putna, E.S., Younkin, T., Rachmady, W., Shah, U., and Yueh, W., "Improvement in Linewidth Roughness by Postprocessing," J. Vac. Sci. Technol. B 26 2265 (2008).