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Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 16, 2009, Pages

Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

(7) Stegner, A R a Pereira, R N a,b Lechner, R a Klein, K a Wiggers, H c Stutzmann, M a Brandt, M S a

a WALTER SCHOTTKY INSTITUT (Germany)

b UNIVERSITY OF AVEIRO (Portugal)

c UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 72849123428 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.80.165326 Document Type: Article

Times cited : (113)

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