Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 541-545

  Stegner, A R ^a   Pereira, R N ^a   Klein, K ^a   Wiggers, H ^b   Brandt, M S ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Doping; EPR; Microwave plasma; Silicon nanocrystals

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; DEFECT DENSITY; DESORPTION; DOPING (ADDITIVES);

LOW-PRESSURE MICROWAVE PLASMA REACTOR; MICROWAVE PLASMA; PRECURSOR GAS;

NANOCRYSTALLINE SILICON;

EID: 36048967904     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.017     Document Type: Article

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