Electronic properties of doped silicon nanocrystal films

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Lechner, Robert ^a   Stegner, Andre R ^a   Pereira, Rui N ^a   Dietmueller, Roland ^a   Brandt, Martin S ^a   Ebbers, André ^b   Trocha, Martin ^b   Wiggers, Hartmut ^c   Stutzmann, Martin ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b EVONIK DEGUSSA GMBH   (Germany)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; LASERS; MAGNETISM; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE SILICON; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; OPTICAL WAVEGUIDES; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PHOSPHORUS; SILICON; SINTERING; SURFACE SEGREGATION;

AS-DEPOSITED FILMS; BEFORE AND AFTER; CRITICAL CONCENTRATIONS; DEFECT CONCENTRATIONS; DOPED SAMPLES; DOPED SILICON; DOPED SILICON NANOCRYSTALS; DOPING CONCENTRATIONS; DOPING LEVELS; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON PARAMAGNETIC RESONANCE; GAS-PHASE; LASER ANNEALING; LATERAL CONDUCTIVITY; ORDERS-OF-MAGNITUDE; PHOSPHORUS DOPING; SPIN-COATED FILMS;

NONMETALS;

EID: 51849130350     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973399     Document Type: Article

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