Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 19, 1998, Pages 12625-12628

  Deane, S ^a   Wehrspohn, R ^a   Powell, M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000478846     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.12625     Document Type: Article

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