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Volumn 312, Issue 2, 2010, Pages 245-249

Growth and phase stabilization of HfO2 thin films by ALD using novel precursors

Author keywords

A3. Atomic layer deposition; A3. Chemical vapor deposition processes; B1. Oxides; B2. Dielectric materials

Indexed keywords

A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B1. OXIDES; B2. DIELECTRIC MATERIALS; CAPACITANCE-EQUIVALENT THICKNESS; CARBON AND HYDROGENS; CHEMICAL VAPOR DEPOSITION PROCESS; CYCLOPENTADIENYLS; GROWTH MECHANISMS; GROWTH MODES; IMPURITY CONTENT; NOVEL PRECURSORS; OXYGEN SOURCES; PHASE STABILIZATION; TETRAGONAL PHASIS; THERMAL DECOMPOSITIONS; THERMAL STABILITY;

EID: 71649086924     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.028     Document Type: Article
Times cited : (75)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.