Low defect density amorphous silicon germanium alloy (1.5 eV) deposited at high growth rate under helium dilution in RF-PECVD method

Journal of Non-Crystalline Solids

Volumn 211, Issue 1-2, 1997, Pages 22-29

  Hazra, Sukti ^a   Middya, A R ^a,b   Ray, Swati ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b ECOLE POLYTECHNIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; HELIUM; HYDROGEN; PHOTOCONDUCTIVITY; SEMICONDUCTOR GROWTH; SILICON SOLAR CELLS;

DEFECT DENSITY; HELIUM DILUTION; HYDROGEN DILUTION; OPTICAL GAP; RADIOFREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; URBACH ENERGY;

GERMANIUM ALLOYS;

EID: 0031126020     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(96)00631-X     Document Type: Article

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