Stability of low bandgap a-Si : H prepared by conventional plasma enhanced chemical vapor deposition

Solid State Communications

Volumn 101, Issue 2, 1997, Pages 115-118

  Hazra, S ^a   Middya, A R ^a,b   Ray, S ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b ECOLE POLYTECHNIQUE   (France)

Author keywords

A. low bandgap a Si:H; B. PECVD; D. light induced degradation

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; DEGRADATION; ELECTRONIC PROPERTIES; ENERGY GAP; FILM PREPARATION; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; STABILITY;

HELIUM DILUTION; LIGHT INDUCED DEGRADATION; MOBILITY LIFETIME; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0030784737     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00553-4     Document Type: Article

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