Conductance-voltage measurements on germanium nanocrystal memory structures and effect of gate electric field coupling

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Ng, T H ^a   Chim, W K ^a   Choi, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GERMANIUM; PERMITTIVITY;

CONDUCTANCE-VOLTAGE MEASUREMENTS; GATE ELECTRIC FIELD COUPLING; GERMANIUM NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 33645144755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186738     Document Type: Article

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