Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gates

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 165-169

  Kobayashi, Daisuke ^a,b   Makino, Takahiro ^b   Hirose, Kazuyuki ^a,b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

Author keywords

Analytical expressions; Parasitic bipolar transistors; Saturation mode; Single event transients; Soft errors; SOI; Storage time

Indexed keywords

ANALYTICAL EXPRESSIONS; PARASITIC BIPOLAR TRANSISTORS; SATURATION MODE; SINGLE-EVENT TRANSIENTS; SOFT ERRORS; SOI; STORAGE TIME;

BIPOLAR TRANSISTORS; ERROR CORRECTION; SIMULATORS; TEMPORAL LOGIC;

TRANSIENTS;

EID: 70449112714     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173245     Document Type: Conference Paper

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